FUNDAMENTAL ENERGY GAP OF GAN FROM PHOTOLUMINESCENCE EXCITATION SPECTRA.MONEMAR B.1974; PHYS. REV., B; U.S.A.; DA. 1974; VOL. 10; NO 2; PP. 676-681; BIBL. 21 REF.Article

RED PAIR LUMINESCENCE IN GAP: CUMONEMAR B.1972; J. LUMINESC.; NETHERL.; DA. 1972; VOL. 5; NO 6; PP. 472-481; BIBL. 24 REF.Serial Issue

3th international conference on shallow impurities in semiconductors, Linköping, SWE, 10-12 August, 1988MONEMAR, B.Conference series - Institute of physics. 1989, Num 95, pp XI-579, issn 0305-2346, p. [590 p.]Conference Proceedings

PROPERTIES OF VPE-GROWN GAN DOPED WITH AL AND SOME IRON-GROUP METALSMONEMAR B; LAGERSTEDT O.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 10; PP. 6480-6491; BIBL. 44 REF.Article

REEVALUATION OF BANDGAP AND FREE EXCITON BINDING ENERGY OF GAP.MONEMAR B; SAMUELSON L.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 26; NO 3; PP. 165-167; BIBL. 17 REF.Article

VARIATION OF LATTICE PARAMETERS IN GAN WITH STOICHIOMETRY AND DOPINGLAGERSTEDT O; MONEMAR B.1979; PHYS. REV., B; USA; DA. 1979; VOL. 19; NO 6; PP. 3064-3070; BIBL. 56 REF.Article

OPTICAL TRANSITIONS VIA THE DEEP O DONOR IN GAP. I: PHONON INTERACTION IN LOW-TEMPERATURE SPECTRAMONEMAR B; SAMUELSON L.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 2; PP. 809-829; BIBL. 95 REF.Article

OPTICAL CHARACTERIZATION OF DEEP O IMPLANTS IN GAAS.MONEMAR B; BLUM JM.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 4; PP. 1529-1537; BIBL. 63 REF.Article

Bound excitons in GaNMONEMAR, B.Journal of physics. Condensed matter (Print). 2001, Vol 13, Num 32, pp 7011-7026, issn 0953-8984Article

OPTICAL TRANSITIONS VIA THE DEEP O DONOR IN GAP. II: TEMPERATURE DEPENDENCE OF CROSS SECTIONSSAMUELSON L; MONEMAR B.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 2; PP. 830-843; BIBL. 35 REF.Article

PROPERTIES OF ZN-DOPED VPE-GROWN GAN. I: LUMINESCENCE DATA IN RELATION TO DOPING CONDITIONSMONEMAR B; LAGERSTEDT O; GISLASON HP et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 1; PP. 625-639; BIBL. 51 REF.Article

PROPERTIES OF GAN TUNNELING MIS LIGHT-EMITTING DIODES.LAGERSTEDT O; MONEMAR B; GISLASON H et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 5; PP. 2953-2957; BIBL. 16 REF.Article

SECONDARY DISLOCATION CLIMB DURING OPTICAL EXCITATION OF GAAS LASER MATERIALWOOLHOUSE GR; MONEMAR B; SERRANO CM et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 1; PP. 94-97; BIBL. 22 REF.Article

PROPERTIES OF ZN-DOPED VPE-GROWN GAN. II: OPTICAL CROSS SECTIONSMONEMAR B; GISLASON HB; LAGERSTEDT O et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 1; PP. 640-649; BIBL. 20 REF.Article

Deep acceptorlike recombination in bulk liquid encapsulated Czochralski GaP, studied with optically detected magnetic resonanceGODLEWSKI, M; MONEMAR, B.Journal of applied physics. 1988, Vol 64, Num 1, pp 200-206, issn 0021-8979Article

Electronic properties of a (Cu-Li)-related neutral complex defect with a bound exciton at 2.25 eV in GaPCHEN, W. M; MONEMAR, B.Physical review. B, Condensed matter. 1987, Vol 36, Num 15, pp 7948-7954, issn 0163-1829Article

Optically detected magnetic resonance in oxygen-doped GaPGODLEWSKI, M; MONEMAR, B.Physical review. B, Condensed matter. 1988, Vol 37, Num 5, pp 2752-2755, issn 0163-1829Article

Optical study of complex formation in Ag-doped CdTeMONEMAR, B; MOLVA, E; LE SI DANG et al.Physical review. B, Condensed matter. 1986, Vol 33, Num 2, pp 1134-1145, issn 0163-1829Article

Group III-nitride based hetero and quantum structuresMONEMAR, B; POZINA, G.Progress in quantum electronics. 2000, Vol 24, Num 6, pp 239-290, issn 0079-6727Article

Defect states in 2.0-MeV electron-irradiated phosphorus-doped siliconAWADELKARIM, O. O; MONEMAR, B.Journal of applied physics. 1989, Vol 65, Num 12, pp 4779-4788, issn 0021-8979, 10 p.Article

Alternating donorlike-acceptorlike configurationally bistable defect in irradiated phosphorus-doped siliconAWADELKARIM, O. O; MONEMAR, B.Physical review. B, Condensed matter. 1988, Vol 38, Num 14, pp 10116-10119, issn 0163-1829Article

Delayed optical detection of magnetic resonance for defects in Si and GaAsCHEN, W. M; MONEMAR, B.Journal of applied physics. 1990, Vol 68, Num 5, pp 2506-2509, issn 0021-8979, 4 p.Article

Nonequilibrium carrier processes in the presente of microwaves and magnetic fields in epitaxial GaAs studied by photoluminescence spectroscopyWANG, F. P; MONEMAR, B.Physical review. B, Condensed matter. 1990, Vol 41, Num 15, pp 10780-10786, issn 0163-1829, 7 p.Article

Oxygen in GaP revisitedGODLEWSKI, M; MONEMAR, B.Acta physica Polonica. A. 1989, Vol 75, Num 2, pp 351-354, issn 0587-4246, 4 p.Article

Phonon coupling in optical transitions for singlet-triplet pairs of bound excitons in semiconductorsPISTOL, M. E; MONEMAR, B.Physical review. B, Condensed matter. 1986, Vol 33, Num 10, pp 7006-7012, issn 0163-1829Article